JPH0424871B2 - - Google Patents

Info

Publication number
JPH0424871B2
JPH0424871B2 JP57008448A JP844882A JPH0424871B2 JP H0424871 B2 JPH0424871 B2 JP H0424871B2 JP 57008448 A JP57008448 A JP 57008448A JP 844882 A JP844882 A JP 844882A JP H0424871 B2 JPH0424871 B2 JP H0424871B2
Authority
JP
Japan
Prior art keywords
substrate
photodiode
region
semiconductor
well
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57008448A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58125975A (ja
Inventor
Hidetsugu Oda
Shinichi Teranishi
Yasuo Ishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP57008448A priority Critical patent/JPS58125975A/ja
Publication of JPS58125975A publication Critical patent/JPS58125975A/ja
Publication of JPH0424871B2 publication Critical patent/JPH0424871B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP57008448A 1982-01-22 1982-01-22 固体撮像素子 Granted JPS58125975A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57008448A JPS58125975A (ja) 1982-01-22 1982-01-22 固体撮像素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57008448A JPS58125975A (ja) 1982-01-22 1982-01-22 固体撮像素子

Publications (2)

Publication Number Publication Date
JPS58125975A JPS58125975A (ja) 1983-07-27
JPH0424871B2 true JPH0424871B2 (en]) 1992-04-28

Family

ID=11693403

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57008448A Granted JPS58125975A (ja) 1982-01-22 1982-01-22 固体撮像素子

Country Status (1)

Country Link
JP (1) JPS58125975A (en])

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0715981B2 (ja) * 1985-12-03 1995-02-22 松下電子工業株式会社 固体撮像装置
JPH07123161B2 (ja) * 1986-12-03 1995-12-25 三菱電機株式会社 固体撮像素子
JP2822393B2 (ja) * 1988-07-30 1998-11-11 ソニー株式会社 固体撮像装置及びその駆動方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6216599A (ja) * 1985-07-16 1987-01-24 三菱瓦斯化学株式会社 多層プリント配線板用ガラス織布基材

Also Published As

Publication number Publication date
JPS58125975A (ja) 1983-07-27

Similar Documents

Publication Publication Date Title
JPH0523505B2 (en])
JP2005310826A (ja) 固体撮像装置
JP2004039832A (ja) 光電変換装置及びその製造方法
WO2005109512A1 (en) Photoelectric conversion device and manufacturing method thereof
JPS58125970A (ja) 固体撮像装置の製造方法
EP0499275B1 (en) Solid state imager
JPH0424871B2 (en])
JP2912533B2 (ja) 固体撮像装置
JP3247163B2 (ja) 固体撮像装置及びその製造方法
JP2812003B2 (ja) 固体撮像素子及びその駆動方法
JPS6149465A (ja) 固体撮像装置
JPH0424872B2 (en])
JP2573582B2 (ja) 固体撮像子の製造方法
JPS63312669A (ja) 固体撮像素子
JPS6223156A (ja) 固体撮像装置およびその製造方法
JPS639968A (ja) 静電誘導トランジスタイメ−ジセンサの素子分離法
JPH06275809A (ja) 固体撮像素子
JPH07120774B2 (ja) 固体撮像装置
JPS60244068A (ja) 埋込みチヤネル電荷結合素子
JPH0774336A (ja) 固体撮像素子
JPS63155759A (ja) イメ−ジセンサ
JPH02161775A (ja) Ｃｃｄ形固体撮像装置
JPH0318058A (ja) 固体撮像装置の製造方法
Ozaki et al. A high-packing density pixel with punchthrough read-out method for an HDTV interline CCD
JPS6273663A (ja) 固体撮像装置およびその駆動方法